Synchronous flash memory emulating the pin configuration of SDRAM

ABSTRACT

A computer system comprises a memory controller and a synchronous non-volatile memory device coupled to the memory controller via a main memory bus. The synchronous non-volatile memory device has external interconnects arranged in a manner that corresponds to interconnects of a synchronous dynamic random access memory device. The synchronous flash memory device, however, comprises a reset connection, and a Vccp power supply connection correspond to first and second no-connect (NC) interconnect pins of the synchronous dynamic random access memory. In one embodiment, the synchronous non-volatile memory device has a command interface comprising a write enable connection (WE#) to receive a write enable signal, a column address strobe connection (CAS#) to receive a column address strobe signal, a row address strobe connection (RAS#) to receive a row address strobe signal, and a chip select connection (CS#) to receive a chip select signal.

RELATED APPLICATION

This Application is a Divisional of U.S. application Ser. No. 09/627,682filed Jul. 28, 2000, which is incorporated herein by reference.

TECHNICAL FIELD OF THE INVENTION

The present invention relates generally to non-volatile memory devicesand in particular the present invention relates to a synchronousnon-volatile flash memory.

BACKGROUND OF THE INVENTION

Memory devices are typically provided as internal storage areas in thecomputer. The term memory identifies data storage that comes in the formof integrated circuit chips. There are several different types ofmemory. One type is RAM (random-access memory). This is typically usedas main memory in a computer environment. RAM refers to read and writememory; that is, you can both write data into RAM and read data fromRAM. This is in contrast to ROM, which permits you only to read data.Most RAM is volatile, which means that it requires a steady flow ofelectricity to maintain its contents. As soon as the power is turnedoff, whatever data was in RAM is lost.

Computers almost always contain a small amount of read-only memory (ROM)that holds instructions for starting up the computer. Unlike RAM, ROMcannot be written to. An EEPROM (electrically erasable programmableread-only memory) is a special type non-volatile ROM that can be erasedby exposing it to an electrical charge. Like other types of ROM, EEPROMis traditionally not as fast as RAM. EEPROM comprise a large number ofmemory cells having electrically isolated gates (floating gates). Datais stored in the memory cells in the form of charge on the floatinggates. Charge is transported to or removed from the floating gates byprogramming and erase operations, respectively.

Yet another type of non-volatile memory is a Flash memory. A Flashmemory is a type of EEPROM that can be erased and reprogrammed in blocksinstead of one byte at a time. Many modem PCS have their BIOS stored ona flash memory chip so that it can easily be updated if necessary. Sucha BIOS is sometimes called a flash BIOS. Flash memory is also popular inmodems because it enables the modem manufacturer to support newprotocols as they become standardized.

A typical Flash memory comprises a memory array which includes a largenumber of memory cells arranged in row and column fashion. Each of thememory cells includes a floating gate field-effect transistor capable ofholding a charge. The cells are usually grouped into blocks. Each of thecells within a block can be electrically programmed in a random basis bycharging the floating gate. The charge can be removed from the floatinggate by a block erase operation. The data in a cell is determined by thepresence or absence of the charge in the floating gate.

A synchronous DRAM (SDRAM) is a type of DRAM that can run at much higherclock speeds than conventional DRAM memory. SDRAM synchronizes itselfwith a CPU's bus and is capable of running at 100 MHZ, about three timesfaster than conventional FPM (Fast Page Mode) RAM, and about twice asfast EDO (Extended Data Output) DRAM and BEDO (Burst Extended DataOutput) DRAM. SDRAM's can be accessed quickly, but are volatile. Manycomputer systems are designed to operate using SDRAM, but would benefitfrom non-volatile memory.

For the reasons stated above, and for other reasons stated below whichwill become apparent to those skilled in the art upon reading andunderstanding the present specification, there is a need in the art fora non-volatile memory device that can operate in a manner similar toSDRAM operation.

SUMMARY OF THE INVENTION

The above-mentioned problems with memory devices and other problems areaddressed by the present invention and will be understood by reading andstudying the following specification.

In one embodiment, the present invention provides a non-volatilesynchronous flash memory that is compatible with existing SDRAM packagepin assignments. It will be apparent from reading the detaileddescription that system designers with knowledge in SDRAM applicationscould easily implement the present invention to improve systemoperation.

In one embodiment, a computer system comprises a memory controller, amain memory bus coupled to the memory controller, and a synchronousnon-volatile memory device coupled to the main memory bus.

In another embodiment, a synchronous flash memory device comprises anarray of non-volatile memory cells, and a package having a plurality ofinterconnects arranged in a manner that corresponds to interconnect pinsof a synchronous dynamic random access memory device. The plurality ofinterconnects of the synchronous flash memory device comprises a resetconnection, and a Vccp power supply connection correspond to first andsecond no-connect (NC) interconnect pins of the synchronous dynamicrandom access memory.

In yet another embodiment, a computer system comprises a memorycontroller, a main memory bus coupled to the memory controller, and asynchronous non-volatile flash memory device coupled to the main memorybus. The synchronous non-volatile flash memory device has a commandinterface comprising a write enable connection (WE#) to receive a writeenable signal, a column address strobe connection (CAS#) to receive acolumn address strobe signal, a row address strobe connection (RAS#) toreceive a row address strobe signal, and a chip select connection (CS#)to receive a chip select signal.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a block diagram of a synchronous flash memory of the presentinvention;

FIG. 1B is an integrated circuit pin interconnect diagram of oneembodiment of the present invention;

FIG. 1C is an integrated circuit interconnect bump grid array diagram ofone embodiment of the present invention;

FIG. 2 illustrates a mode register of one embodiment of the presentinvention;

FIG. 3 illustrates read operations having a CAS latency of one, two andthree clock cycles;

FIG. 4 illustrates activating a specific row in a bank of the memory ofone embodiment of the present invention;

FIG. 5 illustrates timing between an active command and a read or writecommand;

FIG. 6 illustrates a read command;

FIG. 7 illustrates timing for consecutive read bursts of one embodimentof the present invention;

FIG. 8 illustrates random read accesses within a page of one embodimentof the present invention;

FIG. 9 illustrates a read operation followed by a write operation;

FIG. 10 illustrates read burst operation that are terminated using aburst terminate command according to one embodiment of the presentinvention;

FIG. 11 illustrates a write command;

FIG. 12 illustrates a write followed by a read operation;

FIG. 13 illustrates a power-down operation of one embodiment of thepresent invention;

FIG. 14 illustrates a clock suspend operation during a burst read;

FIG. 15 illustrates a memory address map of one embodiment of the memoryhaving two boot sectors;

FIG. 16 is a flow chart of a self-timed write sequence according to oneembodiment of the present invention;

FIG. 17 is a flow chart of a complete write status-check sequenceaccording to one embodiment of the present invention;

FIG. 18 is a flow chart of a self-timed block erase sequence accordingto one embodiment of the present invention;

FIG. 19 is a flow chart of a complete block erase status-check sequenceaccording to one embodiment of the present invention;

FIG. 20 is a flow chart of a block protect sequence according to oneembodiment of the present invention;

FIG. 21 is a flow chart of a complete block status-check sequenceaccording to one embodiment of the present invention;

FIG. 22 is a flow chart of a device protect sequence according to oneembodiment of the present invention;

FIG. 23 is a flow chart of a block unprotect sequence according to oneembodiment of the present invention;

FIG. 24 illustrates the timing of an initialize and load mode registeroperation;

FIG. 25 illustrates the timing of a clock suspend mode operation;

FIG. 26 illustrates the timing of a burst read operation;

FIG. 27 illustrates the timing of alternating bank read accesses;

FIG. 28 illustrates the timing of a full-page burst read operation;

FIG. 29 illustrates the timing of a burst read operation using a datamask signal;

FIG. 30 illustrates the timing of a write operation followed by a readto a different bank;

FIG. 31 illustrates the timing of a write operation followed by a readto the same bank; and

FIG. 32 illustrates a block diagram of a system according to oneembodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

In the following detailed description of present embodiments, referenceis made to the accompanying drawings that form a part hereof, and inwhich is shown by way of illustration specific embodiments in which theinventions may be practiced. These embodiments are described insufficient detail to enable those skilled in the art to practice theinvention, and it is to be understood that other embodiments may beutilized and that logical, mechanical and electrical changes may be madewithout departing from the spirit and scope of the present invention.The following detailed description is, therefore, not to be taken in alimiting sense, and the scope of the present invention is defined onlyby the claims.

The following detailed description is divided into two major sections.The first section is an Interface Functional Description that detailscompatibility with an SDRAM memory. The second major section is aFunctional Description that specifies flash architecture functionalcommands.

Interface Functional Description

Referring to FIG. 1A, a block diagram of one embodiment of the presentinvention is described. The memory device 100 includes an array ofnon-volatile flash memory cells 102. The array is arranged in aplurality of addressable banks. In one embodiment, the memory containsfour memory banks 104, 106, 108 and 110. Each memory bank containsaddressable sectors of memory cells. The data stored in the memory canbe accessed using externally provided location addresses received byaddress register 112. The addresses are decoded using row addressmultiplexer circuitry 114. The addresses are also decoded using bankcontrol logic 116 and row address latch and decode circuitry 118. Toaccess an appropriate column of the memory, column address counter andlatch circuitry 120 couples the received addresses to column decodecircuitry 122. Circuit 124 provides input/output gating, data masklogic, read data latch circuitry and write driver circuitry. Data isinput through data input registers 126 and output through data outputregisters 128. Command execution logic 130 is provided to control thebasic operations of the memory device. A state machine 132 is alsoprovided to control specific operations performed on the memory arraysand cells. A status register 134 and an identification register 136 canalso be provided to output data. The command circuit 130 and/or statemachine 132 can be generally referred to as control circuitry to controlread, write, erase and other memory operations.

FIG. 1B illustrates an interconnect pin assignment of one embodiment ofthe present invention. The memory package 150 has 54 interconnect pins.The pin configuration is substantially similar to available SDRAMpackages. Two interconnects specific to the present invention are RP#152 and Vccp 154. Although the present invention may share interconnectlabels that appear the same as SDRAM's, the function of the signalsprovided on the interconnects are described herein and should not beequated to SDRAM's unless set forth herein. FIG. 1C illustrates oneembodiment of a memory package 160 that has solder bump connectionsinstead of the pin connections of FIG. 1C. The present invention,therefore, is not limited to a specific package configuration.

Prior to describing the operational features of the memory device, amore detailed description of the interconnect pins and their respectivesignals is provided.

The input clock connection is used to provide a clock signal (CLK). Theclock signal can be driven by a system clock, and all synchronous flashmemory input signals are sampled on the positive edge of CLK. CLK alsoincrements an internal burst counter and controls the output registers.

The input clock enable (CKE) connection is used to activate (HIGH state)and deactivates (LOW state) the CLK signal input. Deactivating the clockinput provides POWER-DOWN and STANDBY operation (where all memory banksare idle), ACTIVE POWER-DOWN (a memory row is ACTIVE in either bank) orCLOCK SUSPEND operation (burst/access in progress). CKE is synchronousexcept after the device enters power-down modes, where CKE becomesasynchronous until after exiting the same mode. The input buffers,including CLK, are disabled during power-down modes to provide lowstandby power. CKE may be tied HIGH in systems where power-down modes(other than RP# deep power-down) are not required.

The chip select (CS#) input connection provides a signal to enable(registered LOW) and disable (registered HIGH) a command decoderprovided in the command execution logic. All commands are masked whenCS# is registered HIGH. Further, CS# provides for external bankselection on systems with multiple banks, and CS# can be considered partof the command code; but may not be necessary.

The input command input connections for RAS#, CAS#, and WE# (along withCAS#, CS#) define a command that is to be executed by the memory, asdescribed in detail below. The input/output mask (DQM) connections areused to provide input mask signals for write accesses and an outputenable signal for read accesses. Input data is masked when DQM issampled HIGH during a WRITE cycle. The output buffers are placed in ahigh impedance (High-Z) state (after a two-clock latency) when DQM issampled HIGH during a READ cycle. DQML corresponds to data connectionsDQ0-DQ7 and DQMH corresponds to data connections DQ8-DQ15. DQML and DQMHare considered to be the same state when referenced as DQM.

Address inputs 133 are primarily used to provide address signals. In theillustrated embodiment the memory has 12 lines (A0-A11). Other signalscan be provided on the address connections, as described below. Theaddress inputs are sampled during an ACTIVE command (row-address A0-A11)and a READ/WRITE command (column-address A0-A7) to select one locationin a respective memory bank. The address inputs are also used to providean operating code (OpCode) during a LOAD COMMAND REGISTER operation,explained below. Address lines A0-A11 are also used to input modesettings during a LOAD MODE REGISTER operation.

An input reset/power-down (RP#) connection 140 is used for reset andpower-down operations. Upon initial device power-up, a 100 μs delayafter RP# has transitioned from LOW to HIGH is required in oneembodiment for internal device initialization, prior to issuing anexecutable command. The RP# signal clears the status register, sets theinternal state machine (ISM) 132 to an array read mode, and places thedevice in a deep power-down mode when LOW. During power down, all inputconnections, including CS# 142, are “Don't Care” and all outputs areplaced in a High-Z state. When the RP# signal is equal to a VHH voltage(5V), all protection modes are ignored during WRITE and ERASE. The RP#signal also allows a device protect bit to be set to 1 (protected) andallows block protect bits of a 16 bit register 149, at locations 0 and15 to be set to 0 (unprotected) when brought to VHH. The protect bitsare described in more detail below. RP# is held HIGH during all othermodes of operation.

Bank address input connections, BA0 and BA1 define which bank an ACTIVE,READ, WRITE, or BLOCK PROTECT command is being applied. The DQ0-DQ15connections 143 are data bus connections used for bi-directional datacommunication. Referring to FIG. 1B, a VCCQ connection is used toprovide isolated power to the DQ connections to improved noise immunity.In one embodiment, VCCQ=Vcc or 1.8V±0.15V. The VSSQ connection is usedto isolated ground to DQs for improved noise immunity. The VCCconnection provides a power supply, such as 3V. A ground connection isprovided through the Vss connection. Another optional voltage isprovided on the VCCP connection 144. The VCCP connection can be tiedexternally to VCC, and sources current during device initialization,WRITE and ERASE operations. That is, writing or erasing to the memorydevice can be performed using a VCCP voltage, while all other operationscan be performed with a VCC voltage. The Vccp connection is coupled to ahigh voltage switch/pump circuit 145.

The following sections provide a more detailed description of theoperation of the synchronous flash memory. One embodiment of the presentinvention is a nonvolatile, electrically sector-erasable (Flash),programmable read-only memory containing 67,108,864 bits organized as4,194,304 words by 16 bits. Other population densities are contemplated,and the present invention is not limited to the example density. Eachmemory bank is organized into four independently erasable blocks (16total). To ensure that critical firmware is protected from accidentalerasure or overwrite, the memory can include sixteen 256K-word hardwareand software lockable blocks. The memory's four-bank architecturesupports true concurrent operations.

A read access to any bank can occur simultaneously with a backgroundWRITE or ERASE operation to any other bank. The synchronous flash memoryhas a synchronous interface (all signals are registered on the positiveedge of the clock signal, CLK). Read accesses to the memory can be burstoriented. That is, memory accesses start at a selected location andcontinue for a programmed number of locations in a programmed sequence.Read accesses begin with the registration of an ACTIVE command, followedby a READ command. The address bits registered coincident with theACTIVE command are used to select the bank and row to be accessed. Theaddress bits registered coincident with the READ command are used toselect the starting column location and bank for the burst access.

The synchronous flash memory provides for programmable read burstlengths of 1, 2, 4 or 8 locations, or the full page, with a burstterminate option. Further, the synchronous flash memory uses an internalpipelined architecture to achieve high-speed operation.

The synchronous flash memory can operate in low-power memory systems,such as systems operating on three volts. A deep power-down mode isprovided, along with a power-saving standby mode. All inputs and outputsare low voltage transistor-transistor logic (LVTTL) compatible. Thesynchronous flash memory offers substantial advances in Flash operatingperformance, including the ability to synchronously burst data at a highdata rate with automatic column address generation and the capability torandomly change column addresses on each clock cycle during a burstaccess.

In general, the synchronous flash memory is configured similar to amulti-bank DRAM that operates at low voltage and includes a synchronousinterface. Each of the banks is organized into rows and columns. Priorto normal operation, the synchronous flash memory is initialized. Thefollowing sections provide detailed information covering deviceinitialization, register definition, command descriptions and deviceoperation.

The synchronous flash is powered up and initialized in a predefinedmanner. After power is applied to VCC, VCCQ and VCCP (simultaneously),and the clock signal is stable, RP# 140 is brought from a LOW state to aHIGH state. A delay, such as a 100 μs is delay, is needed after RP#transitions HIGH in order to complete internal device initialization.After the delay time has passed, the memory is placed in an array readmode and is ready for Mode Register programming or an executablecommand. After initial programming of a non-volatile mode register 147(NVMode Register), the contents are automatically loaded into a volatileMode Register 148 during the initialization. The device will power up ina programmed state and will not require reloading of the non-volatilemode register 147 prior to issuing operational commands. This isexplained in greater detail below.

The Mode Register 148 is used to define the specific mode of operationof the synchronous flash memory. This definition includes the selectionof a burst length, a burst type, a CAS latency, and an operating mode,as shown in FIG. 2. The Mode Register is programmed via a LOAD MODEREGISTER command and retains stored information until it isreprogrammed. The contents of the Mode Register may be copied into theNVMode Register 147. The NVMode Register settings automatically load theMode Register 148 during initialization. Details on ERASE NVMODEREGISTER and WRITE NVMODE REGISTER command sequences are provided below.Those skilled in the art will recognize that an SDRAM requires that amode register must be externally loaded during each initializationoperation. The present invention allows a default mode to be stored inthe NV mode register 147. The contents of the NV mode register are thencopied into a volatile mode register 148 for access during memoryoperations.

Mode Register bits M0-M2 specify a burst length, M3 specifies a bursttype (sequential or interleaved), M4-M6 specify a CAS latency, M7 and M8specify a operating mode, M9 is set to one, and M10 and M11 are reservedin this embodiment. Because WRITE bursts are not currently implemented,M9 is set to a logic one and write accesses are single location(non-burst) accesses. The Mode Register must be loaded when all banksare idle, and the controller must wait the specified time beforeinitiating a subsequent operation.

Read accesses to the synchronous flash memory can be burst oriented,with the burst length being programmable, as shown in Table 1. The burstlength determines the maximum number of column locations that can beautomatically accessed for a given READ command. Burst lengths of 1, 2,4, or 8 locations are available for both sequential and the interleavedburst types, and a full-page burst is available for the sequential type.The full-page burst can be used in conjunction with the BURST TERMINATEcommand to generate arbitrary burst lengths that is, a burst can beselectively terminated to provide custom length bursts. When a READcommand is issued, a block of columns equal to the burst length iseffectively selected. All accesses for that burst take place within thisblock, meaning that the burst will wrap within the block if a boundaryis reached. The block is uniquely selected by A1-A7 when the burstlength is set to two, by A2-A7 when the burst length is set to four, andby A3-A7 when the burst length is set to eight. The remaining (leastsignificant) address bit(s) are used to select the starting locationwithin the block. Full-page bursts wrap within the page if the boundaryis reached.

Accesses within a given burst may be programmed to be either sequentialor interleaved; this is referred to as the burst type and is selectedvia bit M3. The ordering of accesses within a burst is determined by theburst length, the burst type and the starting column address, as shownin Table 1.

TABLE 1 BURST DEFINITION Starting Burst Column Address Order of AccessesWithin a Burst Length A2 A1 A0 Type = Sequential Type = Interleaved  2 00-1 0-1 1 1-0 1-0  4 0 0 0-1-2-3 0-1-2-3 0 1 1-2-3-0 1-0-3-2 1 0 2-3-0-12-3-0-1 1 1 3-0-1-2 3-2-1-0  8 0 0 0 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7 0 01 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6 0 1 0 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-50 1 1 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4 1 0 0 4-5-6-7-0-1-2-34-5-6-7-0-1-2-3 1 0 1 5-6-7-0-1-0-3-2 5-4-7-6-1-0-3-2 1 1 06-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1 1 1 1 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0Full n = A0-A7 Cn, Cn + 1, Cn + 2 Not supported Page (location 0-255)Cn + 3, Cn + 4 256 . . . Cn − 1, Cn . . . Notes for Table 1: 1 For aburst length of two, A1-A7 select the block-of-two burst; A0 selects thestart column within the block. 2 For a burst length of four, A2-A7select the block-of-four burst; A0-A1 select the starting column withinthe block. 3 For a burst length of eight, A3-A7 select theblock-of-eight burst; A0-A2 select the starting column within the block.4 For a full-page burst, the full row is selected and A0-A7 select thestarting column. 5 Whenever a boundary of the block is reached within agiven sequence above, the following access wraps within the block. 6 Fora burst length of one, A0-A7 select the unique column to be accessed,and Mode Register bit M3 is ignored.

Column Address Strobe (CAS) latency is a delay, in clock cycles, betweenthe registration of a READ command and the availability of the firstpiece of output data on the DQ connections. The latency can be set toone, two or three clocks cycles. For example, if a READ command isregistered at clock edge n, and the latency is m clocks, the data willbe available by clock edge n+m. The DQ connections will start drivingdata as a result of the clock edge one cycle earlier (n+m−1) and,provided that the relevant access times are met, the data will be validby clock edge n+m. For example, assuming that the clock cycle time issuch that all relevant access times are met, if a READ command isregistered at T0, and the latency is programmed to two clocks, the DQswill start driving after T1 and the data will be valid by T2, as shownin FIG. 3. FIG. 3 illustrates example operating frequencies at whichdifferent clock latency setting can be used. The normal operating modeis selected by setting M7 and M8 to zero, and the programmed burstlength applies to READ bursts.

Table 2 provides sample operating frequencies in MHz for a memoryaccording to embodiments of the present invention.

TABLE 2 CAS CAS CAS SPEED LATENCY = 1 LATENCY = 2 LATENCY = 3 −10 33 MHz66 MHz 100 MHz −12 33 MHz 66 MHz  83 MHz

The following truth tables provide more detail on the operation commandsof an embodiment of the memory of the present invention. An explanationis provided herein of the commands and follows Truth Table 2.

TRUTH TABLE 1 Interface Commands and DQM Operation (Notes: 1) NAME(FUNCTION) CS# RAS# CAS# WE# DQM ADDR DQs NOTES COMMAND INHIBIT H X X XX X X (NOP) NO OPERATION L H H H X X X (NOP) ACTIVE (Select bank L L H HX Bank/ X 2 and activate row) Row READ (Select bank, L H L H X Bank/ X 3column and start Col READ burst) WRITE (Select bank, L H L L X Bank/Valid 3, 4 column and start Col WRITE) BURST TERMINATE L H H L X XActive ACTIVE L L H L X X X 5 TERMINATE LOAD COMMAND L L L H X Com X 6,7 REGISTER Code LOAD MODE L L L L X Op X 8 REGISTER Code WriteEnable/Output — — — — L — Active 9 Enable Write Inhibit/Output — — — — H— High-Z 9 High-Z Notes for Truth Table 1: 1 CKE is HIGH for allcommands shown. 2 A0-A11 provide row-address and BA0, BA1 determinewhich bank is made active. 3 A0-A7 provide column address. BA0 and BA1determine which bank is being read from or written to. 4 A WRITE SETUPcommand sequence (see Truth Table 2) must be completed prior toexecuting a WRITE. 5 ACTIVE TERMINATE is functionally equivalent to theSDRAM PRECHARGE command, however, PRECHARGE (Deactivate row in bank orbanks) is not required for Synchronous Flash memories. 6 A0-07 definethe Command Code, A8-A11 are “Don't Care” for this operation. See TruthTable 2. 7 LOAD COMMAND REGISTER (LCR) replaces the SDRAM AUTO REFRESHor SELF REFRESH mode which is not required for Synchronous Flashmemories. LCR is the first cycle for Flash Memory Command Sequenceoperation. See Truth Table 2. 8 A0-A11 define the Operation Code writtento the Mode Register. The Mode Register can be dynamically loaded eachcycle provided tMRD is satisfied. A default Mode Register value may bestored in the NVMode Register. The contents of the NVMode Register areautomatically loaded into the Mode Register during deviceinitialization. 9 Activates or deactivates the DQs during WRITEs(zero-clock delay) and READs (two-clock delay).

TRUTH TABLE 2 Flash Memory Command Sequences Notes: (1, 2, 3, 4, 17, 18)1^(st) CYCLE 2^(nd) CYCLE 3^(rd) CYCLE Operation CMD ADDR ADDR DQ RP#CMD ADDR ADDR DQ RP# CMD ADDR ADDR DQ RP# NOTE READ LCR 90H Bank X H AC-Row Bank X H READ CA Bank X H 5 6 DEVICE TIVE Config. READ LCR 70H X X HAC- X X X H READ X X X H Status TIVE Register CLEAR LCR 50H X X H StatusRegister ERASE LCR 20H Bank X H AC- Row Bank X H WRITE X Bank D0HH/V_(HH) 7 8 9 10 SETUP/ TIVE Confirm WRITE LCR 40H Bank X H AC- RowBank X H WRITE Col Bank DIN H/V_(HH) 7 8 10 SETUP/ TIVE WRITE ProtectLCR 60H Bank X H AC- Row Bank X H WRITE X Bank 01H H/V_(HH) 7 8 10BLOCK/ TIVE 11 12 Confirm Protect LCR 60H Bank X H AC- X Bank X H WRITEX Bank F1H V_(HH) 7 8 13 Device/ TIVE Confirm Un- LCR 60H Bank X H AC- XBank X H WRITE X Bank D0H H/V_(HH) 7 8 protect TIVE 14 15 Blocks/Confirm ERASE LCR 30H Bank X H AC- X Bank X H WRITE X Bank C0H H 7 8 16NVMO TIVE DE REGIS- TER WRITE LCR A0H Bank X H AC- X Bank X H WRITE XBank X H 7 8 NVMO TIVE DE REGIS- TER Notes for Truth Table 2: 1 CMD =Command: Decoded from CS#, RAS#, WE# input pins. 2 NOP/COMMAND INHIBITcommands can be issued throughout any operation command sequence. 3After a write or erase operation is registered to the ISM and prior tocompletion of the ISM operation, a READ to any location in the bankunder ISM control may result in invalid data. 4 In order to meet thetRCD specification, the appropriate number of NOP/COMMAND INHIBIT cyclesmust be issued between the ACTIVE and READ/WRITE command cycles. 5 Thebank address is required for the block protect bit location; bankaddress is “Don't Care” for manufacturer compatibility ID, device ID,and device protect bit location. 6 CA = Configuration address: 000000H -Manufacturer compatibility ID 000001H - Device ID xx0002H - Blockprotect bit 000003H - Device protect bit 7 The proper command sequence(LCR/ACTIVE/WRITE) is needed to initiate anerase/write/protect/block/unprotect operation. 8 The bank address mustmatch for all three command (LCR/ACTIVE/WRITE) cycles to initiate anerase/write/protect/block unprotect operation. 9 The D0H code is neededat the start of the WRITE command cycle to confirm and initiate an eraseoperation. 10 If the device protect bit is set, then anerase/write/block protect operation can still be initiated by bringingRP# to V_(HH) at the start of the WRITE command cycle and holding it atV_(HH) until the operation is completed. V_(HH) = 5 V. 11 The A10, A11row address and BA0, BA1 bank address select the block to be protected;A0-A9 are “Don't Care.” 12 The 01H code is needed at the start of aWRITE command cycle to confirm and initiate a block protect operation.13 The F1H code is needed at the start of a WRITE command cycle toconfirm and initiate a device protect operation. 14 The D0H code isneeded at the start of a WRITE command cycle to confirm and initiate ablock unprotect operation. 15 If the device protect bit is not set, thenholding the RP# pin HIGH unprotects all sixteen 256 K-word erasableblocks, except for the top and bottom blocks (see FIG. 15). When RP# = 5V, all sixteen 256 K-word erasable blocks (including the top and bottomblocks) will be unprotected, and the device protect bit will be ignored.If the device protect bit is set and RP# is HIGH, the block protect bitscannot be modified. 16 The C0H code is needed at the start of a WRITEcommand cycle to confirm and initiate an ERASE NVMode Registeroperation. 17 BURST WRITE operation is not supported. 18 Theerase/write/protect/block unprotect operations are self-timed. TheStatus Register must be polled to monitor these operations.

The COMMAND INHIBIT function prevents new commands from being executedby the synchronous flash memory, regardless of whether the CLK signal isenabled. The synchronous flash memory is effectively deselected, butoperations already in progress are not affected.

The NO OPERATION (NOP) command is used to perform a NOP to thesynchronous flash memory that is selected (CS# is LOW). This preventsunwanted commands from being registered during idle or wait states, andoperations already in progress are not affected.

The mode register data is loaded via inputs A0-A11. The LOAD MODEREGISTER command can only be issued when all array banks are idle, and asubsequent executable command cannot be issued until a predeterminedtime delay (MRD) is met. The data in the NVMode Register 147 isautomatically loaded into the Mode Register 148 upon power-upinitialization and is the default data unless dynamically changed withthe LOAD MODE REGISTER command.

An ACTIVE command is used to open (or activate) a row in a particulararray bank for a subsequent access. The value on the BA0, BA1 inputsselects the bank, and the address provided on inputs A0-A11 selects therow. This row remains active for accesses until the next ACTIVE command,power-down or RESET.

The READ command is used to initiate a burst read access to an activerow. The value on the BA0, BA1 inputs selects the bank, and the addressprovided on inputs A0-A7 selects the starting column location. Read dataappears on the DQs subject to the logic level on the data mask (DQM)input that was present two clocks earlier. If a given DQM signal wasregistered HIGH, the corresponding DQs will be High-Z (high impedance)two clocks later; if the DQM signal was registered LOW, the DQs willprovide valid data. Thus, the DQM input can be used to mask output dataduring a read operation.

A WRITE command is used to initiate a single-location write access on anactive row. A WRITE command must be preceded by a WRITE SETUP command.The value on the BA0, BA1 inputs selects the bank, and the addressprovided on inputs A0-A7 selects a column location. Input data appearingon the DQs is written to the memory array, subject to the DQM inputlogic level appearing coincident with the data. If a given DQM signal isregistered LOW, the corresponding data will be written to memory; if theDQM signal is registered HIGH, the corresponding data inputs will beignored, and a WRITE will not be executed to that word/column location.A WRITE command with DQM HIGH is considered a NOP.

An ACTIVE TERMINATE command is not required for synchronous flashmemories, but can be provided to terminate a read in a manner similar tothe SDRAM PRECHARGE command. The ACTIVE TERMINATE command can be issuedto terminate a BURST READ in progress, and may or may not be bankspecific.

A BURST TERMINATE command is used to truncate either fixed-length orfull-page bursts. The most recently registered READ command prior to theBURST TERMINATE command will be truncated. BURST TERMINATE is not bankspecific.

The Load Command Register operation is used to initiate flash memorycontrol commands to the Command Execution Logic (CEL) 130. The CELreceives and interprets commands to the device. These commands controlthe operation of the Internal State Machine 132 and the read path (i.e.,memory array 102, ID Register 136 or Status Register 134).

Before any READ or WRITE commands can be issued to a bank within thesynchronous flash memory, a row in that bank must be “opened.” This isaccomplished via the ACTIVE command (defined by CS#, WE#, RAS#, CAS#),which selects both the bank and the row to be activated, see FIG. 4.

After opening a row (issuing an ACTIVE command), a READ or WRITE commandmay be issued to that row, subject to a time period (tRCD)specification, tRCD (MIN) should be divided by the clock period androunded up to the next whole number to determine the earliest clock edgeafter the ACTIVE command on which a READ or WRITE command can beentered. For example, a tRCD specification of 30 ns with a 90 MHZ clock(11.11 ns period) results in 2.7 clocks, which is rounded to 3. This isreflected in FIG. 5, which covers any case where 2<tRCD (MIN)/tCK≦3.(The same procedure is used to convert other specification limits fromtime units to clock cycles).

A subsequent ACTIVE command to a different row in the same bank can beissued without having to close a previous active row, provided theminimum time interval between successive ACTIVE commands to the samebank is defined by tRC.

A subsequent ACTIVE command to another bank can be issued while thefirst bank is being accessed, which results in a reduction of total rowaccess overhead. The minimum time interval between successive ACTIVEcommands to different banks is defined by a time period tRRD.

READ bursts are initiated with a READ command (defined by CS#, WE#,RAS#, CAS#), as shown in FIG. 6. The starting column and bank addressesare provided with the READ command. During READ bursts, the validdata-out element from the starting column address will be availablefollowing the CAS latency after the READ command. Each subsequentdata-out element will be valid by the next positive clock edge. Uponcompletion of a burst, assuming no other commands have been initiated,the DQs will go to a High-Z state. A full page burst will continue untilterminated. (At the end of the page, it will wrap to column 0 andcontinue.) Data from any READ burst may be truncated with a subsequentREAD command, and data from a fixed-length READ burst may be immediatelyfollowed by data from a subsequent READ command. In either case, acontinuous flow of data can be maintained. The first data element fromthe new burst follows either the last element of a completed burst, orthe last desired data element of a longer burst that is being truncated.The new READ command should be issued x cycles before the clock edge atwhich the last desired data element is valid, where x equals the CASlatency minus one. This is shown in FIG. 7 for CAS latencies of one, twoand three; data element n+3 is either the last of a burst of four, orthe last desired of a longer burst. The synchronous flash memory uses apipelined architecture and therefore does not require the 2n ruleassociated with a prefetch architecture. A READ command can be initiatedon any clock cycle following a previous READ command. Full-speed, randomread accesses within a page can be performed as shown in FIG. 8, or eachsubsequent READ may be performed to a different bank.

Data from any READ burst may be truncated with a subsequent WRITEcommand (WRITE commands must be preceded by WRITE SETUP), and data froma fixed-length READ burst may be immediately followed by data from asubsequent WRITE command (subject to bus turnaround limitations). TheWRITE may be initiated on the clock edge immediately following the last(or last desired) data element from the READ burst, provided that I/Ocontention can be avoided. In a given system design, there may be thepossibility that the device driving the input data would go Low-Z beforethe synchronous flash memory DQs go High-Z. In this case, at least asingle-cycle delay should occur between the last read data and the WRITEcommand.

The DQM input is used to avoid I/O contention as shown in FIG. 9. TheDQM signal must be asserted (HIGH) at least two clocks prior to theWRITE command (DQM latency is two clocks for output buffers) to suppressdata-out from the READ. Once the WRITE command is registered, the DQswill go High-Z (or remain High-Z) regardless of the state of the DQMsignal. The DQM signal must be de-asserted prior to the WRITE command(DQM latency is zero clocks for input buffers) to ensure that thewritten data is not masked. FIG. 9 shows the case where the clockfrequency allows for bus contention to be avoided without adding a NOPcycle.

A fixed-length or full-page READ burst can be truncated with eitherACTIVE TERMINATE (may or may not be bank specific) or BURST TERMINATE(not bank specific) commands. The ACTIVE TERMINATE or BURST TERMINATEcommand should be issued x cycles before the clock edge at which thelast desired data element is valid, where x equals the CAS latency minusone. This is shown in FIG. 10 for each possible CAS latency; dataelement n+3 is the last desired data element of a burst of four or thelast desired of a longer burst.

A single-location WRITE is initiated with a WRITE command (defined byCS#, WE#, RAS#, CAS#) as shown in FIG. 11. The starting column and bankaddresses are provided with the WRITE command. Once a WRITE command isregistered, a READ command can be executed as defined by Truth Tables 4and 5. An example is shown in FIG. 12. During a WRITE, the valid data-inis registered coincident with the WRITE command.

Unlike SDRAM, synchronous flash does not require a PRECHARGE command todeactivate the open row in a particular bank or the open rows in allbanks. The ACTIVE TERMINATE command is similar to the BURST TERMINATEcommand; however, ACTIVE TERMINATE may or may not be bank specific.Asserting input A10 HIGH during an ACTIVE TERMINATE command willterminate a BURST READ in any bank. When A10 is low during an ACTIVETERMINATE command, BA0 and BA1 will determine which bank will undergo aterminate operation. ACTIVE TERMINATE is considered a NOP for banks notaddressed by A10, BA0, BA1.

Power-down occurs if clock enable, CKE is registered LOW coincident witha NOP or COMMAND INHIBIT, when no accesses are in progress. Enteringpower-down deactivates the input and output buffers (excluding CKE)after internal state machine operations (including WRITE operations) arecompleted, for power savings while in standby.

The power-down state is exited by registering a NOP or COMMAND INHIBITand CKE HIGH at the desired clock edge (meeting tCKS). See FIG. 13 foran example power-down operation.

A clock suspend mode occurs when a column access/burst is in progressand CKE is registered LOW. In the clock suspend mode, an internal clockis deactivated, “freezing” the synchronous logic. For each positiveclock edge on which CKE is sampled LOW, the next internal positive clockedge is suspended. Any command or data present on the input pins at thetime of a suspended internal clock edge are ignored, any data present onthe DQ pins will remain driven, and burst counters are not incremented,as long as the clock is suspended (see example in FIG. 14). Clocksuspend mode is exited by registering CKE HIGH; the internal clock andrelated operation will resume on the subsequent positive clock edge.

The burst read/single write mode is a default mode in one embodiment.All WRITE commands result in the access of a single column location(burst of one), while READ commands access columns according to theprogrammed burst length and sequence. The following Truth Table 3illustrates memory operation using the CKE signal.

TRUTH TABLE 3 CKE (Notes 1-4) CURRENT CKE_(n−1) CKE_(n) STATECOMMAND_(n) ACTION_(n) NOTES L L POWER- X Maintain POWER- DOWN DOWNCLOCK X Maintain CLOCK- SUSPEND SUSPEND L H POWER- COMMAND ExitPOWER-DOWN 5 DOWN INHIBIT or NOP CLOCK X Exit CLOCK SUSPEND 6 SUSPEND HL All Banks Idle COMMAND POWER-DOWN Entry Reading or INHIBIT or NOPCLOCK SUSPEND Writing VALID Entry H H See Truth Table 4 Notes for TruthTable 3: 1 CKE_(n) is the logic state of CKE at clock edge n; CKE_(n−1)was the state of CKE at the previous clock edge. 2 CURRENT STATE is thestate of the synchronous flash memory immediately prior to clock edge n.3 COMMAND_(n) is the command registered at clock edge n and ACTION_(n)is a result of COMMAND_(n). 4 All states and sequences not shown areillegal or reserved. 5 Exiting POWER-DOWN at clock edge n will put thedevice in the All Banks Idle state in time for clock n + 1 (providedthat tCKS is met). 6 After exiting CLOCK SUSPEND at clock edge n, thedevice will resume operation and recognize the next command at clockedge n + 1.

The following Table further illustrates the command operation whenCKE_(n−1) and CKE_(n) are high.

TRUTH TABLE 4 Current State Bank n - Command to Bank n (Notes 1-6)CURRENT STATE CS# RAS# CAS# WE# COMMAND/ACTION Notes Any H X X X COMMANDINHIBIT (NOP/continue previous operation) L H H H NO OPERATION(NOP/continue previous operation Idle L L H H ACTIVE (Select andactivate row) L L L H LOAD COMMAND REGISTER L L L L LOAD MODE REGISTER 7L L H L ACTIVE TERMINATE 8 Row Active L H L H READ (Select column andstart READ burst) L H L L WRITE (Select column and start 8 L L H LWRITE) L L L H ACTIVE TERMINATE LOAD COMMAND REGISTER READ L H L H READ(Select column and start new READ burst) L H L L WRITE (Select columnand start 8 L L H L WRITE) 9 L H H L ACTIVE TERMINATE L L L H BURSTTERMINATE LOAD COMMAND REGISTER WRITE L H L H READ (Select column andstart new 10 READ burst) L L L H LOAD COMMAND REGISTER Notes for TruthTable 4: 1 This table applies CKE_(n−1) was HIGH and CKE_(n) is HIGH(see Truth Table 3). 2 This table is bank specific, except where noted:i.e., the CURRENT STATE is for a specific bank and the commands shownare those allowed to be issued to that bank, when in that state.Exceptions are covered in the notes below. 3 Current state definitions:Idle: The bank is not in initialize, read, write mode and tRP has beenmet. Row Active: A row in the bank has been activated and tRCD has beenmet. No data bursts/accesses and no register accesses are in progress.Read: A READ burst has been initiated and has not yet terminated or beenterminated. Write: A WRITE operation has been initiated to the InternalState Machine and has not yet been completed. 4 The following statesmust not be interrupted by a command issued to the same bank. COMMANDINHIBIT or NOP commands, or allowable commands to the other bank shouldbe issued on any clock edge occurring during these states. Allowablecommands to the other bank are determined by its current state and TruthTable 4, and according to Truth Table 5. Active Terminate: Starts withregistration of an ACTIVE TERMINATE command and ends with tRP is met.Once tRP is met, the bank will be in the Idle state. Row Activating:Starts with registration of an ACTIVE command and ends with tRCD is met.Once tRCD is met, the bank will be in the Row Active state. 5 Thefollowing states must not be interrupted by an executable command;COMMAND INHIBIT or NOP commands must be applied on each positive clockedge during these states. Accessing Mode Register: Starts withregistration of a LOAD MODE REGISTER command, and ends with tMRD hasbeen met. Once the tMRD is met, the synchronous flash' memory will be inthe All Banks Idle state. Initialize Mode: Starts with RP# transitioningfrom LOW to HIGH and ends after 100 μs delay. 6 All states and sequencesnot shown are illegal or reserved. 7 Not bank specific; requires thatall banks are idle. 8 May or may not be bank specific. 9 Not bankspecific; BURST TERMINATE affects the most recent READ burst, regardlessof bank. 10 A READ to Bank n is allowed; however, the validity of thedata is not guaranteed while the ISM write operation is taking place.After the write operation is complete, the device will automaticallyenter the array read mode and an ACTIVE-READ will output valid data.

The following Table illustrates a command operation when CKE_(n−1) andCKE_(n) are high and the bank is changed.

TRUTH TABLE 5 Current State Bank n - Command to Bank m (Notes 1-6)CURRENT STATE CS# RAS# CAS# WE# COMMAND/ACTION Notes Any H X X X COMMANDINHIBIT (NOP/continue previous operation) L H H H NO OPERATION(NOP/continue previous operation Idle X X X X Any Command OtherwiseAllowed to Bank m Row Activating, L L H H ACTIVE (Select and activaterow) Active, or L H L H READ (Select column and start READ Active burst)Terminate L H L L WRITE (Select column and start WRITE L L H L ACTIVETERMINATE L L L H LOAD COMMAND REGISTER READ L L H H ACTIVE (Select andactivate row) L H L H READ (Select column and start new READ burst) L HL L WRITE (Select column and start WRITE) L L H L ACTIVE TERMINATE L L LH LOAD COMMAND REGISTER WRITE L L H H ACTIVE (Select and activate row) LH L H READ (Select column and start READ burst) L L H L ACTIVE TERMINATEL H H L BURST TERMINATE L L L H LOAD COMMAND REGISTER Notes for TruthTable 5: 1 This table applies CKE_(n−1) was HIGH and CKE_(n) is HIGH(see Truth Table 3). 2 This table describes alternate bank operation,except where noted; i.e., the current state is for bank n and thecommands shown are those allowed to be issued to bank m (assuming thatbank m is in such a state that the given command is allowable).Exceptions are covered in the notes below. 3 Current state definitions:Idle: The bank is not in initialize, read, write mode and tRP has beenmet. Row Active: A row in the bank has been activated and tRCD has beenmet. No data bursts/accesses and no register accesses are in progress.Read: A READ burst has been initiated and has not yet terminated or beenterminated. Write: A WRITE operation has been initiated to the InternalState Machine and has not yet been completed. 4 LOAD MODE REGISTERcommand may only be issued when all banks are idle. 5 A BURST TERMINATEcommand cannot be issued to another bank; it applies to the bankrepresented by the current state only. 6 All states and sequences notshown are illegal or reserved.

Function Description

The synchronous flash memory incorporates a number of features to makeit ideally suited for code storage and execute-in-place applications onan SDRAM bus. The memory array is segmented into individual eraseblocks. Each block may be erased without affecting data stored in otherblocks. These memory blocks are read, written and erased by issuingcommands to the command execution logic 130 (CEL). The CEL controls theoperation of the Internal State Machine 132 (ISM), which completelycontrols all ERASE NVMODE REGISTER, WRITE NVMODE REGISTER, WRITE, BLOCKERASE, BLOCK PROTECT, DEVICE PROTECT, UNPROTECT ALL BLOCKS and VERIFYoperations. The ISM 132 protects each memory location from over-erasureand optimizes each memory location for maximum data retention. Inaddition, the ISM greatly simplifies the control necessary for writingthe device in-system or in an external programmer.

The synchronous flash memory is organized into 16 independently erasablememory blocks that allow portions of the memory to be erased withoutaffecting the rest of the memory data. Any block may behardware-protected against inadvertent erasure or writes. A protectedblock requires that the RP# pin be driven to VHH (a relatively highvoltage) before being modified. The 256K-word blocks at locations 0 and15 can have additional hardware protection. Once a PROTECT BLOCK commandhas been executed to these blocks, an UNPROTECT ALL BLOCKS command willunlock all blocks except the blocks at locations 0 and 15, unless theRP# pin is at VHH. This provides additional security for critical codeduring in-system firmware updates, should an unintentional powerdisruption or system reset occur.

Power-up initialization, ERASE, WRITE and PROTECT timings are simplifiedby using an ISM to control all programming algorithms in the memoryarray. The ISM ensures protection against over-erasure and optimizeswrite margin to each cell. During WRITE operations, the ISMautomatically increments and monitors WRITE attempts, verifies writemargin on each memory cell and updates the ISM Status Register. When aBLOCK ERASE operation is performed, the ISM automatically Overwrites theentire addressed block (eliminates over-erasure), increments andmonitors ERASE attempts and sets bits in the ISM Status Register.

The 8-bit ISM Status Register 134 allows an external processor 200, ormemory controller, to monitor the status of the ISM during WRITE, ERASEand PROTECT operations. One bit of the 8-bit Status Register (SR7) isset and cleared entirely by the ISM. This bit indicates whether the ISMis busy with an ERASE, WRITE or PROTECT task. Additional errorinformation is set in three other bits (SR3, SR4 and SR5): write andprotect block error, erase and unprotect all blocks error, and deviceprotection error. Status register bits SR0, SR1 and SR2 provide detailson the ISM operation underway. The user can monitor whether adevice-level or bank-level ISM operation (including which bank is underISM control) is underway. These six bits (SR3-SR5) must be cleared bythe host system. The Status Register is describe in further detail belowwith reference to Table 3.

The CEL 130 receives and interprets commands to the device. Thesecommands control the operation of the ISM and the read path (i.e.,memory array, device configuration or Status Register). Commands may beissued to the CEL while the ISM is active.

To allow for maximum power conservation, the synchronous flash featuresa very low current, deep power-down mode. To enter this mode, the RP#pin 140 (reset/power-down) is taken to VSS±0.2V. To prevent aninadvertent RESET, RP# must be held at Vss for 100 ns prior to thedevice entering the reset mode. With RP# held at Vss, the device willenter the deep power-down mode. After the device enters the deeppower-down mode, a transition from LOW to HIGH on RP# will result in adevice power-up initialize sequence as outlined herein. TransitioningRP# from LOW to HIGH after entering the reset mode but prior to enteringdeep power-down mode requires a 1 μs delay prior to issuing anexecutable command. When the device enters the deep power-down mode, allbuffers excluding the RP# buffer are disabled and the current draw islow, for example, a maximum of 50 μA at 3.3V VCC. The input to RP# mustremain at Vss during deep power-down. Entering the RESET mode clears theStatus Register 134 and sets the ISM 132 to the array read mode.

The synchronous flash memory array architecture is designed to allowsectors to be erased without disturbing the rest of the array. The arrayis divided into 16 addressable “blocks” that are independently erasable.By erasing blocks rather than the entire array, the total deviceendurance is enhanced, as is system flexibility. Only the ERASE andBLOCK PROTECT functions are block oriented. The 16 addressable blocksare equally divided into four banks 104, 106, 108 and 110 of four blockseach. The four banks have simultaneous read-while-write functionality.An ISM WRITE or ERASE operation to any bank can occur simultaneously toa READ operation to any other bank. The Status Register 134 may bepolled to determine which bank is under ISM operation. The synchronousflash memory has a single background operation ISM to control power-upinitialization, ERASE, WRITE, and PROTECT operations. Only one ISMoperation can occur at any time; however, certain other commands,including READ operations, can be performed while the ISM operation istaking place. An operational command controlled by the ISM is defined aseither a bank-level operation or a device-level operation. WRITE andERASE are bank-level ISM operations. After an ISM bank operation hasbeen initiated, a READ to any location in the bank may output invaliddata, whereas a READ to any other bank will read the array. A READSTATUS REGISTER command will output the contents of the Status Register134. The ISM status bit will indicate when the ISM operation is complete(SR7=1). When the ISM operation is complete, the bank will automaticallyenter the array read mode. ERASE NVMODE REGISTER, WRITE NVMODE REGISTER,BLOCK PROTECT, DEVICE PROTECT, and UNPROTECT ALL BLOCKS are device-levelISM operations. Once an ISM device-level operation has been initiated, aREAD to any bank will output the contents of the array. A READ STATUSREGISTER command may be issued to determine completion of the ISMoperation. When SR7=1, the ISM operation will be complete and asubsequent ISM operation may be initiated. Any block may be protectedfrom unintentional ERASE or WRITE with a hardware circuit that requiresthe RP# pin be driven to VHH before a WRITE or ERASE is commenced, asexplained below.

Any block may be hardware-protected to provide extra security for themost sensitive portions of the firmware. During a WRITE or ERASE of ahardware protected block, the RP# pin must be held at VHH until theWRITE or ERASE is completed. Any WRITE or ERASE attempt on a protectedblock without RP#=VHH will be prevented and will result in a write orerase error. The blocks at locations 0 and 15 can have additionalhardware protection to prevent an inadvertent WRITE or ERASE operation.In this embodiment, these blocks cannot be software-unlocked through anUNPROTECT ALL BLOCKS command unless RP#=VHH. The protection status ofany block may be checked by reading its block protect bit with a READSTATUS REGISTER command. Further, to protect a block, a three-cyclecommand sequence must be issued with the block address.

The synchronous flash memory can feature three different types of READs.Depending on the mode, a READ operation will produce data from thememory array, status register, or one of the device configurationregisters. A READ to the device configuration register or the StatusRegister must be preceded by an LCR-ACTIVE cycle and burst length ofdata out will be defined by the mode register settings. A subsequentREAD or a READ not preceded by an LCR-ACTIVE cycle will read the array.However, several differences exist and are described in the followingsection.

A READ command to any bank outputs the contents of the memory array.While a WRITE or ERASE ISM operation is taking place, a READ to anylocation in the bank under ISM control may output invalid data. Uponexiting a RESET operation, the device will automatically enter the arrayread mode.

Performing a READ of the Status Register 134 requires the same inputsequencing as when reading the array, except that an LCR READ STATUSREGISTER (70H) cycle must precede the ACTIVE READ cycles. The burstlength of the Status Register data-out is defined by the Mode Register148. The Status Register contents are updated and latched on the nextpositive clock edge subject to CAS latencies. The device willautomatically enter the array read mode for subsequent READs.

Reading any of the Device Configuration Registers 136 requires the sameinput sequencing as when reading the Status Register except thatspecific addresses must be issued. WE# must be HIGH, and DQM and CS#must be LOW. To read the manufacturer compatibility ID, addresses mustbe at 000000H, and to read the device ID, addresses must be at 000001H.Any of the block protect bits is read at the third address locationwithin each erase block (xx0002H), while the device protect bit is readfrom location 000003H.

The DQ pins are used either to input data to the array. The address pinsare used either to specify an address location or to input a command tothe CEL during the LOAD COMMAND REGISTER cycle. A command input issuesan 8-bit command to the CEL to control the operation mode of the device.A WRITE is used to input data to the memory array. The following sectiondescribes both types of inputs.

To perform a command input, DQM must be LOW, and CS# and WE# must beLOW. Address pins or DQ pins are used to input commands. Address pinsnot used for input commands are “Don't Care” and must be held stable.The 8-bit command is input on DQ0-DQ7 or A0-A7 and is latched on thepositive clock edge.

A WRITE to the memory array sets the desired bits to logic 0s but cannotchange a given bit to a logic 1 from a logic 0. Setting any bits to alogic 1 requires that the entire block be erased. To perform a WRITE,DQM must be LOW, CS# and WE# must be LOW, and VCCP must be tied to VCC.Writing to a protected block also requires that the RP# pin be broughtto VHH. A0-A11 provide the address to be written, while the data to bewritten to the array is input on the DQ pins. The data and addresses arelatched on the rising edge of the clock. A WRITE must be preceded by aWRITE SETUP command.

To simplify the writing of the memory blocks, the synchronous flashincorporates an ISM that controls all internal algorithms for the WRITEand ERASE cycles. An 8-bit command set is used to control the device.See Truth Tables 1 and 2 for a list of the valid commands.

The 8-bit ISM Status Register 134 (see Table 3) is polled to check forERASE NVMODE REGISTER, WRITE NVMODE REGISTER, WRITE, ERASE, BLOCKPROTECT, DEVICE PROTECT or UNPROTECT ALL BLOCKS completion or anyrelated errors. Completion of an ISM operation can be monitored byissuing a READ STATUS REGISTER (70H) command. The contents of the StatusRegister will be output to DQ0-DQ7 and updated on the next positiveclock edge (subject to CAS latencies) for a fixed burst length asdefined by the mode register settings. The ISM operation will becomplete when SR7=1. All of the defined bits are set by the ISM, butonly the ISM status bit is reset by the ISM. The erase/unprotect block,write/protect block, device protection must be cleared using a CLEARSTATUS REGISTER (50H) command. This allows the user to choose when topoll and clear the Status Register. For example, a host system mayperform multiple WRITE operations before checking the Status Registerinstead of checking after each individual WRITE. Asserting the RP#signal or powering down the device will also clear the Status Register.

TABLE 3 STATUS REGISTER STATUS BIT# STATUS REGISTER BIT DESCRIPTION SR7ISM STATUS The ISMS bit displays the active 1 = Ready status of thestate machine when 0 = Busy performing WRITE or BLOCK ERASE. Thecontrolling logic polls this bit to determine when the erase and writestatus bits are valid. SR6 RESERVED Reserved for future use. SR5ERASE/UNPROTECT BLOCK ES is set to 1 after the maximum STATUS number ofERASE cycles is 1 = BLOCK ERASE or executed by the ISM without a BLOCKUNPROTECT error successful verify. This bit is also set 0 = SuccessfulBLOCK ERASE to 1 if a BLOCK UNPROTECT or UNPROTECT operation isunsuccessful. ES is only cleared by a CLEAR STATUS REGISTER command orby a RESET. SR4 WRITE/PROTECT BLOCK WS is set to 1 after the maximumSTATUS number of WRITE cycles is 1 = WRITE or BLOCK executed by the ISMwithout a PROTECT error successful verify. This bit is also set 0 =Successful WRITE or to 1 if a BLOCK or DEVICE BLOCK PROTECT PROTECToperation is unsuccessful. WS is only cleared by a CLEAR STATUS REGISTERcommand or by a RESET. SR2 BANKA1 ISM STATUS When SR0 = 0, the bankunder ISM SR1 BANKA0 ISM STATUS control can be decoded from BA0, BA1:[0,0] Bank0; [0,1] Bank1; [1,0] Bank2; [1,1] Bank3. SR3 DEVICE PROTECTSTATUS DPS is set to 1 if an invalid WRITE, 1 = Device protected,invalid ERASE, PROTECT BLOCK, operation attempted PROTECT DEVICE or 0 =Device unprotected or RP# UNPROTECT ALL BLOCKS is condition metattempted. After one of these commands is issued, the condition of RP#,the block protect bit and the device protect bit are compared todetermine if the desired operation is allowed. Must be cleared by CLEARSTATUS REGISTER or by a RESET. SR0 DEVICE/BANK ISM STATUS DBS is set to1 if the ISM operation 1 = Device level ISM operation is a device-leveloperation. A valid 0 = Bank level ISM operation READ to any bank of thearray can immediately follow the registration of a device-level ISMWRITE operation. When DBS is set to 0, the ISM operation is a bank-leveloperation. A READ to the bank under ISM control may result in invaliddata. SR2 and SR3 can be decoded to determine which bank is under ISMcontrol.

The device ID, manufacturer compatibility ID, device protection statusand block protect status can all be read by issuing a READ DEVICECONFIGURATION (90H) command. To read the desired register, a specificaddress must be asserted. See Table 4 for more details on the variousdevice configuration registers 136.

TABLE 4 DEVICE CONFIGURATION DEVICE CON- FIGURATION ADDRESS DATACONDITION Notes Manufacturer 000000H 2CH Manufacturer 1 Compatibilitycompatibility read Device ID 000001H D3H Device ID read 1 Block Protectxx0002H DQ0 = 1 Block protected 2, 3 Bit xx0002H DQ0 = 0 Blockunprotected Device Protect 000003H DQ0 = 1 Block protect 3 Bitmodification prevented 000003H DQ0 = 0 Block protect modificationenabled Notes for Table 4: 1 DQ8-DQ15 are “Don't Care.” 2 Address toread block protect bit is always the third location within each block. 3DQ1-DQ7 are reserved, DQ8-DQ15 are “Don't Care.”

Commands can be issued to bring the device into different operationalmodes. Each mode has specific operations that can be performed while inthat mode. Several modes require a sequence of commands to be writtenbefore they are reached. The following section describes the propertiesof each mode, and Truth Tables 1 and 2 list all command sequencesrequired to perform the desired operation. Read-while-writefunctionality allows a background operation write or erase to beperformed on any bank while simultaneously reading any other bank. For awrite operation, the LCR-ACTIVE-WRITE command sequences in Truth Table 2must be completed on consecutive clock cycles. However, to simplify asynchronous flash controller operation, an unlimited number of NOPs orCOMMAND INHIBITs can be issued throughout the command sequence. Foradditional protection, these command sequences must have the same bankaddress for the three cycles. If the bank address changes during theLCR-ACTIVE-WRITE command sequence, or if the command sequences are notconsecutive (other than NOPs and COMMAND INHIBITs, which are permitted),the write and erase status bits (SR4 and SR5) will be set and theoperation prohibited.

Upon power-up and prior to issuing any operational commands to thedevice, the synchronous flash is initialized. After power is applied toVCC, VCCQ and VCCP (simultaneously), and the clock is stable, RP# istransitioned from LOW to HIGH. A delay (in one embodiment a 100 μsdelay) is required after RP# transitions HIGH in order to completeinternal device initialization. The device is in the array read mode atthe completion of device initialization, and an executable command canbe issued to the device.

To read the device ID, manufacturer compatibility ID, device protect bitand each of the block protect bits, a READ DEVICE CONFIGURATION (90H)command is issued. While in this mode, specific addresses are issued toread the desired information. The manufacturer compatibility ID is readat 000000H; the device ID is read at 000001H. The manufacturercompatibility ID and device ID are output on DQ0-DQ7. The device protectbit is read at 000003H; and each of the block protect bits is read atthe third address location within each block (xx0002H). The device andblock protect bits are output on DQ0.

Three consecutive commands on consecutive clock edges are needed toinput data to the array (NOPs and Command Inhibits are permitted betweencycles). In the first cycle, a LOAD COMMAND REGISTER command is givenwith WRITE SETUP (40H) on A0-A7, and the bank address is issued on BA0,BA1. The next command is ACTIVE, which activates the row address andconfirms the bank address. The third cycle is WRITE, during which thestarting column, the bank address, and data are issued. The ISM statusbit will be set on the following clock edge (subject to CAS latencies).While the ISM executes the WRITE, the ISM status bit (SR7) will be at 0.A READ operation to the bank under ISM control may produce invalid data.When the ISM status bit (SR7) is set to a logic 1, the WRITE has beencompleted, and the bank will be in the array read mode and ready for anexecutable command. Writing to hardware-protected blocks also requiresthat the RP# pin be set to VHH prior to the third cycle (WRITE), and RP#must be held at VHH until the ISM WRITE operation is complete. The writeand erase status bits (SR4 and SR5) will be set if the LCR-ACTIVE-WRITEcommand sequence is not completed on consecutive cycles or the bankaddress changes for any of the three cycles. After the ISM has initiatedthe WRITE, it cannot be aborted except by a RESET or by powering downthe part. Doing either during a WRITE may corrupt the data beingwritten.

Executing an ERASE sequence will set all bits within a block to logic 1.The command sequence necessary to execute an ERASE is similar to that ofa WRITE. To provide added security against accidental block erasure,three consecutive command sequences on consecutive clock edges arerequired to initiate an ERASE of a block. In the first cycle, LOADCOMMAND REGISTER is given with ERASE SETUP (20H) on A0-A7, and the bankaddress of the block to be erased is issued on BA0, BA1. The nextcommand is ACTIVE, where A10, A11, BA0, BA1 provide the address of theblock to be erased. The third cycle is WRITE, during which ERASE CONFRIM(DOH) is given on DQ0-DQ7 and the bank address is reissued. The ISMstatus bit will be set on the following clock edge (subject to CASlatencies). After ERASE CONFIRM (D0H) is issued, the ISM will start theERASE of the addressed block. Any READ operation to the bank where theaddressed block resides may output invalid data. When the ERASEoperation is complete, the bank will be in the array read mode and readyfor an executable command. Erasing hardware-protected blocks alsorequires that the RP# pin be set to VHH prior to the third cycle(WRITE), and RP# must be held at VHH until the ERASE is completed(SR7=1). If the LCR-ACTIVE-WRITE command sequence is not completed onconsecutive cycles (NOPs and COMMAND INHIBITs are permitted betweencycles) or the bank address changes for one or more of the commandcycles, the write and erase status bits (SR4 and SR5) will be set andthe operation is prohibited.

The contents of the Mode Register 148 may be copied into the NVModeRegister 147 with a WRITE NVMODE REGISTER command. Prior to writing tothe NVMode Register, an ERASE NVMODE REGISTER command sequence must becompleted to set all bits in the NVMode Register to logic 1. The commandsequence necessary to execute an ERASE NVMODE REGISTER and WRITE NVMODEREGISTER is similar to that of a WRITE. See Truth Table 2 for moreinformation on the LCR-ACTIVE-WRITE commands necessary to complete ERASENVMODE REGISTER and WRITE NVMODE REGISTER. After the WRITE cycle of theERASE NVMODE REGISTER or WRITE NVMODE REGISTER command sequence has beenregistered, a READ command may be issued to the array. A new WRITEoperation will not be permitted until the current ISM operation iscomplete and SR7=1.

Executing a BLOCK PROTECT sequence enables the first level ofsoftware/hardware protection for a given block. The memory includes a16-bit register that has one bit corresponding to the 16 protectableblocks. The memory also has a register to provide a device bit used toprotect the entire device from write and erase operations. The commandsequence necessary to execute a BLOCK PROTECT is similar to that of aWRITE. To provide added security against accidental block protection,three consecutive command cycles are required to initiate a BLOCKPROTECT. In the first cycle, a LOAD COMMAND REGISTER is issued with aPROTECT SETUP (60H) command on A0-A7, and the bank address of the blockto be protected is issued on BA0, BA1. The next command is ACTIVE, whichactivates a row in the block to be protected and confirms the bankaddress. The third cycle is WRITE, during which BLOCK PROTECT CONFIRM(01H) is issued on DQ0-DQ7, and the bank address is reissued. The ISMstatus bit will be set on the following clock edge (subject to CASlatencies). The ISM will then begin the PROTECT operation. If theLCR-ACTIVE-WRITE is not completed on consecutive cycles (NOPs andCOMMAND INHIBITs are permitted between cycles) or the bank addresschanges, the write and erase status bits (SR4 and SR5) will be set andthe operation is prohibited. When the ISM status bit (SR7) is set to alogic 1, the PROTECT has been completed, and the bank will be in thearray read mode and ready for an executable command. Once a blockprotect bit has been set to a 1 (protected), it can only be reset to a 0if the UNPROTECT ALL BLOCKS command. The UNPROTECT ALL BLOCKS commandsequence is similar to the BLOCK PROTECT command; however, in the thirdcycle, a WRITE is issued with a UNPROTECT ALL BLOCKS CONFIRM (D0H)command and addresses are “Don't Care.” For additional information,refer to Truth Table 2. The blocks at locations 0 and 15 have additionalsecurity. Once the block protect bits at locations 0 and 15 have beenset to a 1 (protected), each bit can only be reset to a 0 if RP# isbrought to VHH prior to the third cycle of the UNPROTECT operation, andheld at VHH until the operation is complete (SR7=1). Further, if thedevice protect bit is set, RP# must be brought to VHH prior to the thirdcycle and held at VHH until the BLOCK PROTECT or UNPROTECT ALL BLOCKSoperation is complete. To check a block's protect status, a READ DEVICECON FIGURATION (90H) command may be issued.

Executing a DEVICE PROTECT sequence sets the device protect bit to a 1and prevents a block protect bit modification. The command sequencenecessary to execute a DEVICE PROTECT is similar to that of a WRITE.Three consecutive command cycles are required to initiate a DEVICEPROTECT sequence. In the first cycle, LOAD COMMAND REGISTER is issuedwith a PROTECT SETUP (60H) on A0-A7, and a bank address is issued onBA0, BA1. The bank address is “Don't Care” but the same bank addressmust be used for all three cycles. The next command is ACTIVE. The thirdcycle is WRITE, during which a DEVICE PROTECT (F1H) command is issued onDQ0-DQ7, and RP# is brought to VHH. The ISM status bit will be set onthe following clock edge (subject to CAS latencies). An executablecommand can be issued to the device. RP# must be held at VHH until theWRITE is completed (SR7=1). A new WRITE operation will not be permitteduntil the current ISM operation is complete. Once the device protect bitis set, it cannot be reset to a 0. With the device protect bit set to a1, BLOCK PROTECT or BLOCK UNPROTECT is prevented unless RP# is at VHHduring either operation. The device protect bit does not affect WRITE orERASE operations. Refer to Table 5 for more information on block anddevice protect operations.

TABLE 5 PROTECT OPERATIONS TRUTH TABLE¹ FUNCTION RP# CS# DQM WE# AddressVccP DQ0-DQ7⁵ DEVICE UNPROTECTED² PROTECT SETUP H L H L 60H X X PROTECTBLOCK³ H L H L BA H 01H PROTECT DEVICE³ V_(HH) L H L X X F1H UNPROTECTALL H/V_(HH) L H L X H D0H BLOCKS^(3, 4) DEVICE PROTECTED² PROTECTSETUP⁴ H or L H L 60H X X V_(HH) PROTECT BLOCK^(3, 4) V_(HH) L H L BA H01H UNPROTECT ALL V_(HH) L H L X H D0H BLOCKS^(3, 4) Notes for Table 5:¹L = V_(IL) (LOW), H = V_(IH) (HIGH), X = V_(IL) or V_(IH) (“Don'tCare”). ²BA = Block Address. ³Operation must be preceded by PROTECTSETUP command. ⁴RP# = V_(IH) (3 V), all blocks except the top and bottomblocks will unlock; RP# = V_(HH) (5 V), all blocks will unlock.⁵DQ8-DQ15 are “Don't Care.”

After the ISM status bit (SR7) has been set, the device/bank (SR0),device protect (SR3), bankA0 (SR1), bankA1 (SR2), write/protect block(SR4) and erase/unprotect (SR5) status bits may be checked. If one or acombination of SR3, SR4, SR5 status bits has been set, an error hasoccurred during operation. The ISM cannot reset the SR3, SR4 or SR5bits. To clear these bits, a CLEAR STATUS REGISTER (50H) command must begiven. Table 6 lists the combinations of errors.

TABLE 6 STATUS REGISTER ERROR DECODE¹ STATUS BITS SR5 SR4 SR3 ERRORDESCRIPTION² 0 0 0 No errors 0 1 0 WRITE, BLOCK PROTECT or DEVICEPROTECT error 0 1 1 Invalid BLOCK PROTECT or DEVICE PROTECT, RP# notvalid (V_(HH)) 0 1 1 Invalid BLOCK or DEVICE PROTECT, RP# not valid 1 00 ERASE or ALL BLOCK UNPROTECT error 1 0 1 Invalid ALL BLOCK UNPROTECT,RP# not valid (V_(HH)) 1 1 0 Command sequencing error Notes for Table 6:¹SR0-SR5 must be cleared using CLEAR STATUS REGISTER. ²Assumes that SR3,SR4, SR5 reflect non-cumulative results.

The synchronous flash memory is designed and fabricated to meet advancedcode and data storage requirements. To ensure this level of reliability,VCCP must be tied to Vcc during WRITE or ERASE cycles. Operation outsidethese limits may reduce the number of WRITE and ERASE cycles that can beperformed on the device. Each block is designed and processed for aminimum of 100,000-WRITE/ERASE-cycle endurance.

The synchronous flash memory offers several power-saving features thatmay be utilized in the array read mode to conserve power. A deeppower-down mode is enabled by bringing RP# to VSS±0.2V. Current draw(ICC) in this mode is low, such as a maximum of 50 μA. When CS# is HIGH,the device will enter the active standby mode. In this mode the currentis also low, such as a maximum ICC current of 30 mA. If CS# is broughtHIGH during a write, erase, or protect operation, the ISM will continuethe WRITE operation, and the device will consume active IccP power untilthe operation is completed.

Referring to FIG. 16, a flow chart of a self-timed write sequenceaccording to one embodiment of the present invention is described. Thesequence includes loading the command register (code 40H), receiving anactive command and a row address, and receiving a write command and acolumn address. The sequence then provides for a status register pollingto determine if the write is complete. The polling monitors statusregister bit 7 (SR7) to determine if it is set to a 1. An optionalstatus check can be included. When the write is completed, the array isplaced in the array read mode.

Referring to FIG. 17, a flow chart of a complete write status-checksequence according to one embodiment of the present invention isprovided. The sequence looks for status register bit 4 (SR4) todetermine if it is set to a 0. If SR4 is a 1, there was an error in thewrite operation. The sequence also looks for status register bit 3 (SR3)to determine if it is set to a 0. If SR3 is a 1, there was an invalidwrite error during the write operation.

Referring to FIG. 18, a flow chart of a self-timed block erase sequenceaccording to one embodiment of the present invention is provided. Thesequence includes loading the command register (code 20H), and receivingan active command and a row address. The memory then determines if theblock is protected. If it is not protected, the memory performs a writeoperation (D0H) to the block and monitors the status register forcompletion. An optional status check can be performed and the memory isplaced in an array read mode. If the block is protected, the erase isnot allowed unless the RP# signal is at an elevated voltage (VHH).

FIG. 19 illustrates a flow chart of a complete block erase status-checksequence according to one embodiment of the present invention. Thesequence monitors the status register to determine if a command sequenceerror occurred (SR4 or SR5=1). If SR3 is set to a 1, an invalid erase orunprotect error occurred. Finally, a block erase or unprotect errorhappened if SR5 is set to a 1.

FIG. 20 is a flow chart of a block protect sequence according to oneembodiment of the present invention. The sequence includes loading thecommand register (code 60H), and receiving an active command and a rowaddress. The memory then determines if the block is protected. If it isnot protected, the memory performs a write operation (01H) to the blockand monitors the status register for completion. An optional statuscheck can be performed and the memory is placed in an array read mode.If the block is protected, the erase is not allowed unless the RP#signal is at an elevated voltage (VHH).

Referring to FIG. 21, a flow chart of a complete block status-checksequence according to one embodiment of the present invention isprovided. The sequence monitors the status register bits 3, 4 and 5 todetermine of errors were detected.

FIG. 22 is a flow chart of a device protect sequence according to oneembodiment of the present invention. The sequence includes loading thecommand register (code 60H), and receiving an active command and a rowaddress. The memory then determines if RP# is at VHH. The memoryperforms a write operation (F1H) and monitors the status register forcompletion. An optional status check can be performed and the memory isplaced in an array read mode.

FIG. 23 is a flow chart of a block unprotect sequence according to oneembodiment of the present invention. The sequence includes loading thecommand register (code 60H), and receiving an active command and a rowaddress. The memory then determines if the memory device is protected.If it is not protected, the memory determines if the boot locations(blocks 0 and 15) are protected. If none of the blocks are protected thememory performs a write operation (D0H) to the block and monitors thestatus register for completion. An optional status check can beperformed and the memory is placed in an array read mode. If the deviceis protected, the erase is not allowed unless the RP# signal is at anelevated voltage (VHH). Likewise, if the boot locations are protected,the memory determines if all blocks should be unprotected.

FIG. 24 illustrates the timing of an initialize and load mode registeroperation. The mode register is programmed by providing a load moderegister command and providing operation code (opcode) on the addresslines. The opcode is loaded into the mode register. As explained above,the contents of the non-volatile mode register are automatically loadedinto the mode register upon power-up and the load mode registeroperation may not be needed.

FIG. 25 illustrates the timing of a clock suspend mode operation, andFIG. 26 illustrates the timing of another burst read operation. FIG. 27illustrates the timing of alternating bank read accesses. Here activecommands are needed to change bank addresses. A full page burst readoperation is illustrated in FIG. 28. Note that the full page burst doesnot self terminate, but requires a terminate command.

FIG. 29 illustrates the timing of a read operation using a data masksignal. The DQM signal is used to mask the data output so that Dout m+1is not provided on the DQ connections.

Referring to FIG. 30, the timing of a write operation followed by a readto a different bank is illustrated. In this operation, a write isperformed to bank a and a subsequent read is performed to bank b. Thesame row is accessed in each bank.

Referring to FIG. 31, the timing of a write operation followed by a readto the same bank is illustrated. In this operation, a write is performedto bank a and a subsequent read is performed to bank a. A different rowis accessed for the read operation, and the memory must wait for theprior write operation to be completed. This is different from the readof FIG. 30 where the read was not delayed due to the write operation.

Interface

As explained above, many processor/computer systems use a code that isstored on a hard disk, copied to the DRAM and executed from the DRAM.This is done because the speed and performance of the system is usuallydictated by the performance of the DRAM. Most of today's systems useSDRAM because it is synchronous and runs at speeds exceeding 100 MHz.

The main reason for using DRAM rather than using prior Flash memories isbased on cost and performance. The cost to the system is two fold.First, both Flash memories as well as DRAM would have to be purchased.Secondly, the system cannot put the Flash memory on the main memory bussince prior Flash memories do not work in the same manner as a DRAM, andDRAM controllers are not designed to handle the extra control inputsrequired for today's Flash memory devices. Transferring data from a harddisc to SDRAM takes time. This boot time is often very irritating tocomputer users.

The Flash memory described herein, however, uses the same interface as aDRAM for reading. This flash memory uses the same interconnect pins as aSDRAM and fits into the same package. There are a couple of pins used inthe Flash memory for writing, such as a Vccp that is added to one of thenot-connected, or no-connect, (NC) pins on a SDRAM package. The otherpin is RP# which is used for resetting the Flash Memory chip, explainedabove. The RP# connection is also used on another NC pin on the SDRAMchip.

The Flash read obviously needs to have the same performance as a SDRAMchip. Current flash memories are running as fast as 10 to 50 MHz, whichis much slower than the performance one gets out of SDRAM chips. Thepresent invention provides the same performance as the SDRAM, and allowssystem designers to put this flash memory on the main memory bus. Thus,reducing the pin cost on their controller as well as avoiding the needto support another bus. Using a flash memory also eliminates the storageneeds from which the SDRAM initially gets loaded up. In some systems itwould be the hard disk, or if there were no hard disks on the system, itwould reduce the cost by eliminating the need for a shadow SDRAM.Regarding performance, the present flash memory eliminates the timeneeded to upload the SDRAM at power up and allows for an instant turn onof the system.

In summary, the present invention provides a flash memory device thathas the same interconnect pin configuration as a synchronous DRAM andfits into the same package. Two of the no-connect (NC) interconnect pinsof the SDRAM package have been changed. One NC is replaced with anoptional Vpp connection and a second NC has been replaced with areset/power-down (RP#) interconnect.

FIG. 32 illustrates a block diagram of a system 300 according to oneembodiment of the invention. The system includes a synchronous flashmemory 320 coupled to a memory controller 340 via a main memory bus 330.The main memory bus can also be coupled to a DRAM 350.

Conclusion

A computer system comprises a memory controller and a synchronousnon-volatile memory device coupled to the memory controller via a mainmemory bus. The synchronous non-volatile memory device has externalinterconnects arranged in a manner that corresponds to interconnects ofa synchronous dynamic random access memory device. The synchronous flashmemory device, however, comprises a reset connection, and a Vccp powersupply connection correspond to first and second no-connect (NC)interconnect pins of the synchronous dynamic random access memory. Inone embodiment, the synchronous non-volatile memory device has a commandinterface comprising a write enable connection (WE#) to receive a writeenable signal, a column address strobe connection (CAS#) to receive acolumn address strobe signal, a row address strobe connection (RAS#) toreceive a row address strobe signal, and a chip select connection (CS#)to receive a chip select signal.

1. A synchronous flash memory device comprising: an array ofnon-volatile memory cells; and a plurality of external connectionscomprising, a plurality of bi-directional data connections, a pluralityof memory address connections, a clock input connection, a write enableconnection, a column address strobe connection, a row address strobeconnection, and wherein the plurality of external connections arearranged in a pattern compatible with a synchronous dynamic randomaccess memory (SDRAM).
 2. The synchronous flash memory device of claim1, wherein the plurality of external connections further comprises: aclock enable connection, a chip select connection, a plurality of memoryarray bank address connections, power supply connections, a plurality ofdata mask connections, and a reset connection.
 3. The synchronous flashmemory device of claim 1, wherein the plurality of external connectionsfurther comprises a Vccp power supply connection.
 4. The synchronousflash memory device of claim 1, further comprising a package having aplurality of interconnect pins corresponding to the externalconnections.
 5. The synchronous flash memory device of claim 1, furthercomprising a package having a plurality of conductive interconnectlocations corresponding to the external connections.
 6. The synchronousflash memory device of claim 1, wherein the synchronous flash memorydevice operates within read timing specification parameters for anSDRAM.
 7. A synchronous flash memory device comprising: an array ofnon-volatile memory cells; and a package having a plurality ofinterconnect pins arranged in a manner that corresponds to interconnectpins of a synchronous dynamic random access memory device, wherein theplurality of interconnect pins of the synchronous flash memory devicecomprises a reset connection, and a Vccp power supply connectioncorrespond to first and second no-connect (NC) interconnect pins of thesynchronous dynamic random access memory.
 8. The synchronous flashmemory device of claim 7, wherein the plurality of interconnect pinscomprises: a plurality of bi-directional data connections, a pluralityof memory address connections, a write enable connection, a clock inputconnection, a column address strobe connection, a row address strobeconnection, and power supply connections.
 9. The synchronous flashmemory device of claim 8, wherein the plurality of interconnect pinsfurther comprises: a clock enable connection, a chip select connection,a plurality of memory array bank address connections, a plurality ofdata mask connections, a reset connection, and a Vccp power supplyconnection.
 10. A synchronous flash memory device comprising: an arrayof non-volatile memory cells; and a package having a plurality of solderbump connections arranged in a manner that corresponds to solder bumpconnections of a synchronous dynamic random access memory device,wherein the plurality of solder bump connections of the synchronousflash memory device comprises a reset connection, and a Vccp powersupply connection correspond to first and second no-connect (NC) solderbump connections of the synchronous dynamic random access memory. 11.The synchronous flash memory device of claim 10, wherein the pluralityof solder bump connections comprises: a plurality of bi-directional dataconnections, a plurality of memory address connections, a write enableconnection, a clock input connection, a column address strobeconnection, a row address strobe connection, and power supplyconnections.
 12. The synchronous flash memory device of claim 11,wherein the plurality of interconnect pins further comprises: a clockenable connection, a chip select connection, a plurality of memory arraybank address connections, a plurality of data mask connections, a resetconnection, and a Vccp power supply connection.
 13. A synchronous flashmemory device having an interface comprising: a clock input connection(CLK) to receive a clock signal; a write enable connection (WE#) toreceive a write enable signal; a column address strobe connection (CAS#)to receive a column address strobe signal; a row address strobeconnection (RAS#) to receive a row address strobe signal; a chip selectconnection (CS#) to receive a chip select signal; a reset connection(RP#) to receive a reset signal; a Vccp power supply connection toreceive an elevated power supply signal; and a plurality of externalconnections, wherein the plurality of external connections are arrangedin a pattern compatible with a synchronous dynamic random access memory(SDRAM).
 14. The synchronous flash memory device of claim 13, whereinthe interface further comprises: a plurality of bi-directional dataconnections (DQ); a plurality of memory address connections; a clockenable connection (CKE); a plurality of memory array bank addressconnections (BA#); power supply connections (Vcc and Vss); and aplurality of data mask connections (DQM).
 15. The synchronous flashmemory device of claim 14, further comprising a package having aplurality of interconnect pins corresponding to the command interfaceconnections.
 16. The synchronous flash memory device of claim 14,further comprising a package having a plurality of conductiveinterconnect locations corresponding to the command interfaceconnections.
 17. A computer system comprising: a memory controller; amain memory bus coupled to the memory controller, and a synchronousnon-volatile flash memory device coupled to the main memory bus, whereinthe synchronous non-volatile flash memory device has a plurality ofexternal connections are arranged in a pattern compatible with asynchronous dynamic random access memory (SDRAM) and a command interfacecomprising: a write enable connection (WE#) to receive a write enablesignal; a column address strobe connection (CAS#) to receive a columnaddress strobe signal; a row address strobe connection (RAS#) to receivea row address strobe signal; and a chip select connection (CS#) toreceive a chip select signal.
 18. The computer system of claim 17,wherein the synchronous non-volatile flash memory device comprises apackage having a plurality of interconnect pins arranged in a mannerthat corresponds to interconnect pins of a synchronous dynamic randomaccess memory device, wherein the plurality of interconnect pins of thesynchronous flash memory device comprises a reset connection, and a Vccppower supply connection correspond to first and second no-connect (NC)interconnect pins of the synchronous dynamic random access memory. 19.The computer system of claim 17, wherein the synchronous non-volatileflash memory device comprises a package having a plurality of solderbump connections arranged in a manner that corresponds to solder bumpconnections of a synchronous dynamic random access memory device,wherein the plurality of solder bump connections of the synchronousflash memory device comprises a reset connection, and a Vccp powersupply connection correspond to first and second no-connect (NC) solderbump connections of the synchronous dynamic random access memory. 20.The computer system of claim 17, wherein the plurality of externalconnections comprise: a plurality of bi-directional data connections; aplurality of memory address connections; a clock input connection; aclock enable connection; a plurality of memory array bank addressconnections; power supply connections; a plurality of data maskconnections; a reset connection; and a Vccp power supply connection.